OXIDATION SHARPENING OF SILICON TIPS

被引：97

作者：

RAVI, TS ^{[1
]}

MARCUS, RB ^{[1
]}

LIU, D ^{[1
]}

机构：

[1] NEW JERSEY INST TECHNOL,DEPT ELECT ENGN,NEWARK,NJ 07102

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sharp microtips of silicon have potential applications as field emitters and as electrical or mechanical microsensors. This study describes a single unified etching/oxidation treatment that results in uniform tips with controlled radii of atomic dimensions or larger. Variations in the etching/oxidation treatment form multiple tips with two or four tips per etched pyramid, which offer the possibility of higher emission current density for field emitter applications, and higher sensitivity for microsensor applications.

引用

页码：2733 / 2737

页数：5

共 7 条

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[2] KAO DB, 1987, IEEE T ELECTRON DEV, V34, P1008
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LIU, D
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[J]. APPLIED PHYSICS LETTERS, 1991, 58 (10) : 1042 - 1043
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MARCUS, RB
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[6] FORMATION OF SILICON TIPS WITH LESS-THAN-1 NM RADIUS
MARCUS, RB
RAVI, TS
GMITTER, T
CHIN, K
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[J]. APPLIED PHYSICS LETTERS, 1990, 56 (03) : 236 - 238
[7] UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES
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