PRODUCTION OF MIXED METAL-GAS AND PURE METAL-ION BEAMS WITH AN ELECTRODELESS RF ION-SOURCE IN THE LOW KEV REGIME

被引：7

作者：

WALDORF, J ^{[1
]}

OECHSNER, H ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN,CTR MAT RES,W-6750 KAISERSLAUTERN,GERMANY

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1992年 / 63卷 / 04期

关键词：

D O I：

10.1063/1.1142895

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Mixed metal-gas or even pure metal ion beams with current densities in the order of 1 mA cm-2 can be generated by electron beam evaporation of metals into the plasma chamber of an rf ion source operated in electron-cyclotron wave resonance. The operation principle of this novel ion beam source is described, and examples for the production of Ag+ and Cu+ beams with varying fractions of Ar+ ions are presented.

引用

页码：2578 / 2580

页数：3

共 8 条

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[2]

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OECHSNER, H .

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[7] FORMATION OF INTRINSIC OXIDE LAYERS BY ION-IMPLANTATION OF SILICON AND TITANIUM IN THE LOW KILOELECTRONVOLT REGIME [J].

OECHSNER, H ;

WALDORF, J .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 :214-219

[8]

OECHSNER H, 1991, Patent No. 5017835

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