HIGH-DOSE, LOW-ENERGY IMPLANTATION OF NITROGEN IN SILICON, NIOBIUM AND ALUMINUM

被引:8
作者
FUSSER, HJ
OECHSNER, H
机构
[1] UNIV KAISERSLAUTERN,DEPT PHYS,W-6750 KAISERSLAUTERN,GERMANY
[2] UNIV KAISERSLAUTERN,CTR MAT RES,W-6750 KAISERSLAUTERN,GERMANY
关键词
D O I
10.1016/0257-8972(91)90132-G
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Silicon, niobium an aluminium surfaces were implanted with nitrogen ion beams at energies between 1 and 5 keV. Subsequently, the distributions of the implanted species were determined by means of Auger electron spectroscopy sputter depth profiling. Depending on the ion energy and dose and the substrate, different concentration depth profiles were observed. The nitrogen profiles become stationary for high ion doses and indicate the generation of intrinsic nitride layers at the bombarded surfaces. The depth profiles can be described by simple implantation theory when sputtering of the substrate surface during implantation and the highest stoichiometrically possible nitrogen concentration in the corresponding nitrides are taken into account.
引用
收藏
页码:97 / 102
页数:6
相关论文
共 27 条
[1]  
BADER M, 1961, NASA R105 REP
[2]   CALCULATION OF PROJECTED RANGES - ANALYTICAL SOLUTIONS AND A SIMPLE GENERAL ALGORITHM [J].
BIERSACK, JP .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :199-206
[3]  
DAVIS LE, 1978, HDB AUGER ELECTRON S
[4]  
DEARNALEY G., 1973, ION IMPLANTATION
[5]  
FUSSER HJ, PLASMA SURFACE ENG, V2, P1033
[6]  
FUSSER HJ, 1989, THESIS U KAISERSLAUT
[7]   ELECTRONIC-STRUCTURE OF AN AIN FILM PRODUCED BY ION-IMPLANTATION, STUDIED BY ELECTRON-SPECTROSCOPY [J].
GAUTIER, M ;
DURAUD, JP ;
LEGRESSUS, C .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :574-580
[8]  
Harper J. M. E., 1978, THIN FILM PROCESSES, P175
[9]   ION-BEAM OXIDATION [J].
HARPER, JME ;
HEIBLUM, M ;
SPEIDELL, JL ;
CUOMO, JJ .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4118-4121
[10]   TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS [J].
HARPER, JME ;
CUOMO, JJ ;
KAUFMAN, HR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :737-756