FORMATION OF INTRINSIC OXIDE LAYERS BY ION-IMPLANTATION OF SILICON AND TITANIUM IN THE LOW KILOELECTRONVOLT REGIME

被引：3

作者：

OECHSNER, H ^{[1
]}

WALDORF, J ^{[1
]}

机构：

[1] UNIV KAISERSLAUTERN,CTR MAT RES,W-6750 KAISERSLAUTERN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1991年 / 139卷

关键词：

D O I：

10.1016/0921-5093(91)90619-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Intrinsic oxide layers on silicon (100) and polycrystalline titanium surfaces were generated by ion implantation with oxygen ion beams at energies between 2 and 5 keV. The oxide films were characterized by Auger sputter depth profiling. Composition and growth of the surface layers were investigated as a function of the ion fluence and the ion energy. The oxygen concentration depth profiles in silicon are compared with theoretical predictions from range calculations for low energy ion implantation.

引用

页码：214 / 219

页数：6

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