EFFECT OF SHORT WAVELENGTH ILLUMINATION ON THE CHARACTERISTIC BULK DIFFUSION LENGTH IN RIBBON SILICON SOLAR-CELLS

被引：9

作者：

HO, CT

MATHIAS, JD

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 02期

关键词：

D O I：

10.1016/0038-1101(81)90004-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 120

页数：6

共 10 条

[1]

[Anonymous], [No title captured]

[2]

Bell R. O., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P89

[3] TRAP SATURATION IN SILICON SOLAR CELLS [J].

FABRE, E ;

MAUTREF, M ;

MIRCEA, A .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :239-241

[4] INVESTIGATION OF LIGHT ENHANCEMENT OF DIFFUSION LENGTH BY DC PHOTO-VOLTAIC CURRENT MEASUREMENT [J].

HO, CT ;

MATHIAS, JD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1332-1334

[5]

HO CT, 1977, APPL PHYS LETT, V32, P463

[6] EFFECTS OF ILLUMINATION ON DEPLETION-REGION RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER SOLAR-CELLS [J].

PANAYOTATOS, P ;

CARD, HC ;

YANG, ES .

PROCEEDINGS OF THE IEEE, 1977, 65 (08) :1213-1213

[7] INTERPRETATION OF STEADY-STATE SURFACE PHOTOVOLTAGE MEASUREMENTS IN EPITAXIAL SEMICONDUCTOR LAYERS [J].

PHILLIPS, WE .

SOLID-STATE ELECTRONICS, 1972, 15 (10) :1097-&

[8]

POGANY A, 1980, 14TH PHOT SPEC C REC

[9]

Ravi K. V., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P182

[10] DETECTION OF RECOMBINATION CENTERS IN SOLAR-CELLS FROM JUNCTION CAPACITANCE TRANSIENTS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :410-419

← 1 →