METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CDSE/ZNSE STRAINED-LAYER SINGLE QUANTUM-WELLS AND SUPERLATTICES ON GAAS SUBSTRATES

Reflection high-energy electron diffraction (RHEED) oscillations that continued up to three cycles were observed during metalorganic molecular-beam epitaxial growth of CdSe on a ZnSe buffer grown on a GaAs substrate, showing two-dimensional layer-by-layer growth despite the large lattice mismatch (6.85%). Based on this result, we could definitely control the growth of CdSe/ZnSe strained-layer single quantum wells with well widths of 1-3 monolayers and of short-period superlattices under in situ RHEED monitoring. Optical properties strongly demonstrated the successful formation of well-defined structures consisting of these highly strained II-VI semiconductor multilayers.