HIGH-FIELD AUTOCOVARIANCE COEFFICIENT, DIFFUSION-COEFFICIENT AND NOISE IN INGAAS AT 300-K

被引：11

作者：

NAG, BR ^{[1
]}

AHMED, SR ^{[1
]}

ROY, MD ^{[1
]}

机构：

[1] JADAVPUR UNIV,CALCUTTA 700032,W BENGAL,INDIA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 02期

关键词：

D O I：

10.1016/0038-1101(87)90156-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：235 / 239

页数：5

共 17 条

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[9] TRANSFERRED-ELECTRON DOMAINS IN IN0.53GA0.47AS IN DEPENDENCE ON THE THE NL-PRODUCT [J].

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