PSEUDOMORPHIC GAINP SCHOTTKY DIODE AND MSM DETECTOR ON INP

被引：9

作者：

LOUALICHE, S

LECORRE, A

GINUDI, A

HENRY, L

VAUDRY, C

CLEROT, F

机构：

[1] CNET Lannion B, Route de Tregastel, 22301, Lannion Cedex

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 07期

关键词：

Indium compounds; Schottky-barrier devices; Semiconductor devices and materials;

D O I：

10.1049/el:19900316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high gap pseudomorphic GalnP material is used to enhance the Schottky barrier height of InP. This material leads to a Schottky diode with a barrier height of 0-8 eV, with ideality factor close to one and breakdown voltages of 200 V on undoped n type material. This diode is used to fabricate a MSM detector on InP. The device of 4 × 4µm fingers and 40/µm2active surface presents a risetime of 74 ps andaFWHMof 183 ps. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：487 / 488

页数：2

共 8 条

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