PSEUDOMORPHIC GAINP SCHOTTKY DIODE AND HIGH ELECTRON-MOBILITY TRANSISTOR ON INP

[1] THE IMPACT OF EPITAXIAL LAYER DESIGN AND QUALITY ON GAINAS/ALINAS HIGH-ELECTRON-MOBILITY TRANSISTOR PERFORMANCE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 678 - 681

[2] GAAS/GA0.47IN0.53AS LATTICE-MISMATCHED SCHOTTKY-BARRIER GATES - INFLUENCE OF MISFIT DISLOCATIONS ON REVERSE LEAKAGE CURRENTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1145 - 1147

[3] HIGH-TRANSCONDUCTANCE INSULATING-GATE INP/INGAAS BURIED P-BUFFER DH-MODFETS GROWN BY MOVPE [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 162 - 164

[4] BARRIER HEIGHTS AND ELECTRICAL-PROPERTIES OF INTIMATE METAL-ALGAAS JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1516 - 1522

[5] HETEROJUNCTION INALAS/INP MESFETS GROWN BY OMVPE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 223 - 225

[6] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1206 - 1211

[7] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR STRUCTURES [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 621 - 623

[10] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P275

[1] THE IMPACT OF EPITAXIAL LAYER DESIGN AND QUALITY ON GAINAS/ALINAS HIGH-ELECTRON-MOBILITY TRANSISTOR PERFORMANCE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 678 - 681

[2] GAAS/GA0.47IN0.53AS LATTICE-MISMATCHED SCHOTTKY-BARRIER GATES - INFLUENCE OF MISFIT DISLOCATIONS ON REVERSE LEAKAGE CURRENTS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1145 - 1147

[3] HIGH-TRANSCONDUCTANCE INSULATING-GATE INP/INGAAS BURIED P-BUFFER DH-MODFETS GROWN BY MOVPE [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 162 - 164

[4] BARRIER HEIGHTS AND ELECTRICAL-PROPERTIES OF INTIMATE METAL-ALGAAS JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1516 - 1522

[5] HETEROJUNCTION INALAS/INP MESFETS GROWN BY OMVPE [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 223 - 225

[6] SCHOTTKY BARRIERS ON ATOMICALLY CLEAN N-INP (110) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1206 - 1211

[7] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR STRUCTURES [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 621 - 623

[10] Sze S. M., 1981, PHYSICS SEMICONDUCTO, P275