MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55-MU-M WAVELENGTHS - ASSOCIATION OF A SCHOTTKY PHOTODIODE AND A FIELD-EFFECT TRANSISTOR ON GAINP-GAINAS HETEROEPITAXY

被引：5

作者：

THERANI, AH ^{[1
]}

DECOSTER, D ^{[1
]}

VILCOT, JP ^{[1
]}

RAZEGHI, M ^{[1
]}

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2215 / 2218

页数：4

共 14 条

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[3]

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[4]

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[6]

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[7] PLANAR MONOLITHIC INTEGRATED PHOTORECEIVER FOR 1.3-1.55 MU-M WAVELENGTH APPLICATIONS USING GALNAS-GAAS HETEROEPITAXIES [J].

RAZEGHI, M ;

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[8]

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[9] MONOLITHIC PHOTORECEIVER INTEGRATING GALNAS PIN/JFET WITH DIFFUSED JUNCTIONS [J].

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[10]

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