MODEL CALCULATION OF SURFACE STATES IN SILICON

被引：23

作者：

JONES, RO

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1972年 / 5卷 / 13期

关键词：

D O I：

10.1088/0022-3719/5/13/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1615 / &

共 43 条

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[2] SURFACE BANDS OF SILICON (III) SLABS BY A LCAO METHOD
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[3] CALCULATION OF SURFACE STATES OF SILICON
ALSTRUP, I
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[5] ON THE THEORY OF SURFACE STATES
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[6] PARAMETRIC APPROACH TO SURFACE SCREENING OF A WEAK EXTERNAL ELECTRIC FIELD
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[9] BLOUNT WI, 1962, SOLID ST PHYS, V13, P362
[10] SURFACE STATES IN SI
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SGHEDONI, A
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