ATOMIC-STRUCTURE OF LASER ANNEALED SI(111)-(1X1)

[1] BENNETT PG, UNPUBLISHED

[2] DETERMINATION OF A CU(110) SURFACE CONTRACTION BY LEED INTENSITY ANALYSIS [J]. SURFACE SCIENCE, 1979, 83 (02) : 559 - 571

[3] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1252 - 1257

[4] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[5] SIMILARITY BETWEEN THE SI(111)-(7 X 7) AND IMPURITY-STABILIZED SI(111)-(1 X 1) SURFACES [J]. SOLID STATE COMMUNICATIONS, 1980, 35 (04) : 345 - 347

[6] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421

[7] ATOMIC-STRUCTURE OF AN IMPURITY-STABILIZED SI[111] SURFACE - REFINEMENT USING A COMBINED-LAYER METHOD [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 814 - 824

[8] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &

[9] 1979 LEED ANALYSIS OF CU(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 194 - 197

[10] LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF ATOMIC ARRANGEMENT ON IMPURITY-STABILIZED UNRECONSTRUCTED SI(111) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (24) : 1622 - 1625

[1] BENNETT PG, UNPUBLISHED

[2] DETERMINATION OF A CU(110) SURFACE CONTRACTION BY LEED INTENSITY ANALYSIS [J]. SURFACE SCIENCE, 1979, 83 (02) : 559 - 571

[3] STRUCTURE DETERMINATION FOR THE (110) SURFACE OF ZINCBLENDE STRUCTURE COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1252 - 1257

[4] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492

[5] SIMILARITY BETWEEN THE SI(111)-(7 X 7) AND IMPURITY-STABILIZED SI(111)-(1 X 1) SURFACES [J]. SOLID STATE COMMUNICATIONS, 1980, 35 (04) : 345 - 347

[6] Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421

[7] ATOMIC-STRUCTURE OF AN IMPURITY-STABILIZED SI[111] SURFACE - REFINEMENT USING A COMBINED-LAYER METHOD [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 814 - 824

[8] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &

[9] 1979 LEED ANALYSIS OF CU(100) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 194 - 197

[10] LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF ATOMIC ARRANGEMENT ON IMPURITY-STABILIZED UNRECONSTRUCTED SI(111) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (24) : 1622 - 1625