LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF ATOMIC ARRANGEMENT ON IMPURITY-STABILIZED UNRECONSTRUCTED SI(111) SURFACES

被引：83

作者：

SHIH, HD

JONA, F

JEPSEN, DW

MARCUS, PM

机构：

[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 37卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.37.1622

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1622 / 1625

页数：4

共 44 条

[1] SI(100) SURFACE RECONSTRUCTION - SPECTROSCOPIC SELECTION OF A STRUCTURAL MODEL
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[2] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION
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[3] ENERGY-DEPENDENT AND ANGULAR-DEPENDENT SECONDARY-ELECTRON EMISSION FROM A SILICON (111) 7X7 SURFACE - EMISSION FROM BULK STATES
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[4] NEW INTERPRETATION OF ANGULAR-RESOLVED PHOTOEMISSION MEASUREMENTS FROM CLEAVED SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1976, 18 (08) : 1149 - 1152
[5] DEBE MK, COMMUNICATION
[6] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
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GROBMAN, WD
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1378 - &
[7] RELATIONSHIP BETWEEN ATOMIC STRUCTURE AND ELECTRONIC PROPERTIES OF (111) SURFACES OF SILICON
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FISCHER, TE
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (11) : 732 - &
[8] TIGHT-BINDING CALCULATION OF A CORE-VALENCE VALENCE AUGER LINE-SHAPE - SI(111)
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MCGUIRE, EJ
PANDEY, KC
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (19) : 1154 - 1157
[9] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE
FLORIO, JV
ROBERTSON, WD
[J]. SURFACE SCIENCE, 1971, 24 (01) : 173 - +
[10] ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY
HAGSTRUM, HD
BECKER, GE
[J]. PHYSICAL REVIEW B, 1973, 8 (04): : 1580 - 1591

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