SILICON CRYSTAL-GROWTH IN A CUSP MAGNETIC-FIELD

被引:74
作者
HIRATA, H
HOSHIKAWA, K
机构
[1] NTT, Japan
关键词
Magnetic Fields - Oxygen;
D O I
10.1016/0022-0248(89)90631-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Czochralski silicon crystal growth in the presence of an axially symmetric cusp magnetic field is reported for the first time. The free surface of the melt is centered between two superconducting coils. Oxygen concentration in the crystal is shown to be successfully controlled from 1×1018 to 2×1017 atoms/cm3 by increasing the cusp magnetic field strength up to 3500 Oe at the center of the bottom melt-silica crucible interface, while keeping the crystal rotation constant at 30 rpm and keeping the crucible rotation constant at -10 rpm. Both oxygen and dopant distributions are homogenized by the magnetic field. The good crystal homogeneity results because there is no need to change the crystal and crucible rotations adequately to control the oxygen concentration, in contrast to the previous use of a transverse or vertical magnetic field in which extreme changes in the crucible or crystal rotation rate are required.
引用
收藏
页码:747 / 755
页数:9
相关论文
共 22 条
[1]  
BARRACLOUGH KG, 1986, SEMICONDUCTOR SILICO, P129
[2]  
COWLING TG, 1957, MAGNETOHYDRODYNAMICS, P10
[3]  
HARADA H, 1985, VLSI SCI TECHNOLOGY, P526
[4]   MACROSCOPIC AXIAL DOPANT DISTRIBUTION IN CZOCHRALSKI SILICON-CRYSTALS GROWN IN A VERTICAL MAGNETIC-FIELD [J].
HIRATA, H ;
INOUE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11) :1399-1403
[5]   STUDY OF THERMAL SYMMETRY IN CZOCHRALSKI SILICON MELT UNDER A VERTICAL MAGNETIC-FIELD [J].
HIRATA, H ;
INOUE, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L527-L530
[6]   IMPROVEMENT OF THERMAL SYMMETRY IN CZ SILICON MELTS BY THE APPLICATION OF A VERTICAL MAGNETIC-FIELD [J].
HIRATA, H ;
HOSHIKAWA, K ;
INOUE, N .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :330-334
[7]  
HIRATA H, 1988, J JPN ASS CRYSTAL GR, V15, P61
[8]  
HIRATA H, 1986, J JAPAN ASS CRYSTAL, V13, P18
[9]   CZOCHRALSKI SILICON-CRYSTALS GROWN IN A TRANSVERSE MAGNETIC-FIELD [J].
HOSHI, K ;
ISAWA, N ;
SUZUKI, T ;
OHKUBO, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :693-700
[10]  
HOSHI K, 1980 SPRING M, P811