HIGH FINESSE, THIN ACTIVE LAYER, MULTIQUANTUM WELL OPTICAL BISTABLE DEVICE

被引：3

作者：

OUDAR, JL ^{[1
]}

KUSZELEWICZ, R ^{[1
]}

MICHEL, JC ^{[1
]}

PLANEL, R ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 08期

关键词：

QUANTUM OPTICS; SEMICONDUCTOR DEVICES AND MATERIALS; OPTICS;

D O I：

10.1049/el:19920452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical bistability was observed in a multiquantum well microcavity, with a 500 W/cm2 intensity threshold and a 10:1 contrast. The device design enhances the cavity finese (here up to 250), by increasing the number of layers in the Bragg mirror stacks, and simultaneously reducing the active layer thickness (here 3-lambda/2, i.e. 360 nm).

引用

页码：714 / 715

页数：2

共 13 条

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