BALLISTIC ELECTRON-EMISSION MICROSCOPY OF METAL-SEMICONDUCTOR INTERFACES AND HETEROJUNCTIONS

被引：13

作者：

WILLIAMS, RH

机构：

[1] Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff, CF2 3YB

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90462-K

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ballistic electron emission microscopy is rapidly maturing as a method to probe electrical barriers at semiconductor interfaces with good energy resolution and a lateral resolution of a few tens of angstrom or less. We illustrate the application of the technique by concentrating on the Au/GaAs, Au/CdTe and InAs/GaAs interfaces.

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页码：386 / 390

页数：5

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