IMPURITY BAND CONDUCTION AND PROBLEM OF EXCESS CURRENT IN TUNNEL DIODES

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[3] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (04) : 167 - 168

[6] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848

[7] ONE-DIMENSIONAL IMPURITY BANDS [J]. PHYSICAL REVIEW, 1958, 110 (01): : 41 - 49

[8] OPTICAL ABSORPTION BY DEGENERATE GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 454 - 455

[9] INFLUENCE OF DEGENERACY ON RECOMBINATION RADIATION IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (01) : 20 - 21

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[3] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[5] DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J]. PHYSICAL REVIEW LETTERS, 1959, 3 (04) : 167 - 168

[6] BAND STRUCTURE IN DISORDERED ALLOYS AND IMPURITY SEMICONDUCTORS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) : 840 - 848

[7] ONE-DIMENSIONAL IMPURITY BANDS [J]. PHYSICAL REVIEW, 1958, 110 (01): : 41 - 49

[8] OPTICAL ABSORPTION BY DEGENERATE GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (09) : 454 - 455

[9] INFLUENCE OF DEGENERACY ON RECOMBINATION RADIATION IN GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (01) : 20 - 21