GROWTH AND PROPERTIES OF IN-DOPED AND AS-DOPED HGCDTE BY MBE

Electrical doping of II-VI compound semiconductors is a major issue in MBE growth, especially the p-type doping. In this paper, we will report on the molecular beam epitaxial growth and properties of In- (n-type) and As- (p-type) doped HgCdTe alloys. Unlike the CdTe/HgTe modulation doped approach, we have successfully developed a technique to dope HgCdTe with cadmium arsenide compound directly during the alloy growth, Electrical, optical, structural and chemical properties of these doped HgCdTe layers have been determined by a variety of techniques. The results indicate that these properties vary strongly with crystal orientations. The (211)B phase is a preferred orientation for the MBE growth. The success to control both n- and p-type doping using In and As, respectively, has led to the growth of double layer heterojunction structures for focal plane array applications.