ENERGY-LEVELS AND DEFECT SIGNATURE OF SULFUR-IMPLANTED SILICON BY THERMALLY STIMULATED MEASUREMENTS

被引：15

作者：

KOYAMA, RY ^{[1
]}

PHILLIPS, WE ^{[1
]}

MYERS, DR ^{[1
]}

LIU, YM ^{[1
]}

DIETRICH, HB ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 07期

关键词：

D O I：

10.1016/0038-1101(78)90293-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：953 / 955

页数：3

共 15 条

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[8] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J].

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[9]

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