STUDY OF GOLD ACCEPTOR IN A SILICON P+N JUNCTION AND AN N-TYPE MOS CAPACITOR BY THERMALLY STIMULATED CURRENT AND CAPACITANCE MEASUREMENTS

被引：34

作者：

BUEHLER, MG ^{[1
]}

PHILLIPS, WE ^{[1
]}

机构：

[1] NBS, INST APPL TECHNOL, WASHINGTON, DC 20234 USA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 09期

关键词：

D O I：

10.1016/0038-1101(76)90156-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：777 / +

页数：1

相关论文

共 14 条

[1] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE
BUEHLER, MG
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +
[2] BUEHLER MG, 1973, SEMICONDUCTOR SILICO, P549
[3] BUEHLER MG, 1976, NBS40026 SPEC PUBL
[4] BUEHLER MG, 1974, NBS4006 SPEC PUBL
[5] BUEHLER MG, 1973, NBS806 TECHN NOT, P13
[6] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
HEIMAN, FP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +
[7] BULK LIFETIME DETERMINATION USING AN MOS CAPACITOR
HUANG, JST
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1849 - +
[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[9] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE
PALS, JA
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1139 - 1145
[10] PHILLIPS WE, 1974, NBS4001 SPEC PUBL, P16