SATURATION OF THE LIGHT-INDUCED DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON

被引：89

作者：

PARK, HR

LIU, JZ

WAGNER, S

机构：

来源：

关键词：

D O I：

10.1063/1.101965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2658 / 2660

页数：3

共 12 条

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