RECENT DEVELOPMENTS IN RELAXED AND STRAINED LATTICE MISMATCHED HETEROSTRUCTURES

被引：2

作者：

DEMEESTER, P

COUDENYS, G

BUYDENS, L

ACKAERT, A

MOERMAN, I

POLLENTIER, I

VANDAELE, P

机构：

[1] University of Gent-IMEC, Laboratory of Electromagnetics and Acoustics, B-9000 Gent

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90161-N

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fabrication of novel optoelectronic devices and integrated circuits requires more ways of combining different materials. In this paper we will briefly review recent developments in the realization of relaxed and strained lattice mismatched heterostructures, with emphasis on GaAs and InP based material systems.

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收藏

页码：129 / 136

页数：8

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