THE ELECTRO-OPTIC APPLICATIONS OF INP

被引：11

作者：

FOYT, AG

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 01期

关键词：

D O I：

10.1016/0022-0248(81)90241-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：1 / 8

页数：8

共 45 条

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ANDO, H ;

KANBE, H ;

KIMURA, T ;

YAMAOKA, T ;

KANEDA, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) :804-809

[2] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].

ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335

[3] PULSE DELAY MEASUREMENTS IN ZERO MATERIAL DISPERSION WAVELENGTH REGION FOR OPTICAL FIBERS [J].

COHEN, LG ;

LIN, C .

APPLIED OPTICS, 1977, 16 (12) :3136-3139

[4]

DIADIUK V, UNPUBLISHED

[5]

DOI A, 1979, APPL PHYS LETT, V35, P441, DOI 10.1063/1.91165

[6]

DUSTON DH, 1975, APPL PHYS LETT, V26, P101

[7] BE-IMPLANTED 1.3-MUM INGAASP AVALANCHE PHOTODETECTORS [J].

FENG, M ;

OBERSTAR, JD ;

WINDHORN, TH ;

COOK, LW ;

STILLMAN, GE ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :591-593

[8] A LINEARIZED THEORY FOR THE DIODE-LASER IN AN EXTERNAL CAVITY [J].

GLASSER, LA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (05) :525-531

[9] IONIZATION COEFFICIENTS FOR ELECTRONS AND HOLES IN GASB P-I-N AND INP SCHOTTKY AVALANCHE PHOTO-DIODES [J].

HILDEBRAND, O ;

KUEBART, W ;

DEUFEL, R ;

BENZ, KW ;

STROTTNER, I ;

PILKUHN, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1845-1846

[10]

HSIEH JC, UNPUBLISHED

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