学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
PROPERTIES OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED DIELECTRIC FILMS FROM HEXAMETHYLDISILAZANE
被引:10
作者
:
FREEMAN, D
论文数:
0
引用数:
0
h-index:
0
FREEMAN, D
KERN, W
论文数:
0
引用数:
0
h-index:
0
KERN, W
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
|
1989年
/ 7卷
/ 03期
关键词
:
D O I
:
10.1116/1.576300
中图分类号
:
TB3 [工程材料学];
学科分类号
:
0805 ;
080502 ;
摘要
:
引用
收藏
页码:1446 / 1450
页数:5
相关论文
共 12 条
[11]
NGUYEN SV, 1986, ASTM SPEC TECH PUBL, V960, P173
[12]
PROPERTIES OF THIN LPCVD SILICON OXYNITRIDE FILMS
[J].
PAN, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA
PAN, P
;
ABERNATHEY, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA
ABERNATHEY, J
;
SCHAEFER, C
论文数:
0
引用数:
0
h-index:
0
机构:
IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA
SCHAEFER, C
.
JOURNAL OF ELECTRONIC MATERIALS,
1985,
14
(05)
:617
-632
←
1
2
→
共 12 条
[11]
NGUYEN SV, 1986, ASTM SPEC TECH PUBL, V960, P173
[12]
PROPERTIES OF THIN LPCVD SILICON OXYNITRIDE FILMS
[J].
PAN, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA
PAN, P
;
ABERNATHEY, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA
ABERNATHEY, J
;
SCHAEFER, C
论文数:
0
引用数:
0
h-index:
0
机构:
IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA
SCHAEFER, C
.
JOURNAL OF ELECTRONIC MATERIALS,
1985,
14
(05)
:617
-632
←
1
2
→