PROPERTIES OF THIN LPCVD SILICON OXYNITRIDE FILMS

被引：23

作者：

PAN, P

ABERNATHEY, J

SCHAEFER, C

机构：

[1] IBM, General Technology Div, Essex, Junction, VT, USA, IBM, General Technology Div, Essex Junction, VT, USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 05期

关键词：

D O I：

10.1007/BF02654028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

FILMS

引用

页码：617 / 632

页数：16

共 19 条

[1] PROPERTIES OF SIXOYNZ FILMS ON SI
BROWN, DM
GRAY, PV
HEUMANN, FK
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 311 - &
[2] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS
DIMARIA, DJ
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2722 - 2735
[3] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS
FUJITA, S
SASAKI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 398 - 402
[4] PHYSICOCHEMICAL PROPERTIES OF CHEMICAL VAPOR-DEPOSITED SILICON OXYNITRIDE FROM A SIH4-CO2-NH3-H2 SYSTEM
GAIND, AK
HEARN, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 139 - 145
[5] HYDROGEN CONTENT OF THERMALLY NITRIDED THIN SILICON DIOXIDE FILMS
HABRAKEN, FHPM
EVERS, EJ
KUIPER, AET
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 62 - 64
[6] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS
HAMASAKI, M
ADACHI, T
WAKAYAMA, S
KIKUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3987 - 3992
[7] PLASMA-ENHANCED THERMAL NITRIDATION OF SILICON
ITO, T
KATO, I
NOZAKI, T
NAKAMURA, T
ISHIKAWA, H
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 370 - 372
[8] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN
ITO, T
HIJIYA, S
NOZAKI, T
ARAKAWA, H
SHINODA, M
FUKUKAWA, Y
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 448 - 452
[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +
[10] DEPOSITION AND COMPOSITION OF SILICON OXYNITRIDE FILMS
KUIPER, AET
KOO, SW
HABRAKEN, FHPM
TAMMINGA, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 62 - 66

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