HYDROGEN CONTENT OF THERMALLY NITRIDED THIN SILICON DIOXIDE FILMS

被引：28

作者：

HABRAKEN, FHPM

EVERS, EJ

KUIPER, AET

机构：

[1] STATE UNIV UTRECHT,RJVD GRAAFFLAB,3508 TA UTRECHT,NETHERLANDS

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.94553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：62 / 64

页数：3

共 13 条

[1]

EKSTEDT TW, 1983, 1983 INFOS P EINDHOV, P189

[2]

HABRAKEN FHP, 1983, 1983 P INS FILMS SEM, P121

[3] THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

TAMMINGA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002

[4] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J].

IRENE, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) :1708-1714

[5] DIRECT THERMAL NITRIDATION OF SILICON DIOXIDE FILMS IN ANHYDROUS AMMONIA GAS [J].

ITO, T ;

NOZAKI, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (09) :2053-2057

[6] EFFECT OF THERMALLY NITRIDED SIO2 (NITROXIDE) ON MOS CHARACTERISTICS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) :184-188

[7] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

[8] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[9] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS [J].

LANFORD, WA ;

TRAUTVETTER, HP ;

ZIEGLER, JF ;

KELLER, J .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :566-568

[10]

NAIMAN ML, 1980, IEDM, V80, P562

← 1 2 →