LIGHT-INDUCED METASTABLE STATES IN AMORPHOUS ORGANIC POLYSILANES

被引：19

作者：

NAITO, H ^{[1
]}

ZHANG, SC ^{[1
]}

OKUDA, M ^{[1
]}

DOHMARU, T ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,ADV SCI & TECHNOL RES INST,SAKAI,OSAKA 593,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.358499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultraviolet (UV) light-induced metastable states of transient hole transport in amorphous polymethylphenylsilane (PMPS) have been investigated with a time-of-flight technique. No change in the hole drift mobility is detected after UV light soaking, while the hole lifetime is reduced by UV light irradiation because of the increase in silicon (Si) dangling bond density. The photoscission of Si backbone chain is enhanced by the application of electric field to PMPS during UV light exposure. The origin of this enhancement is discussed. The annealing behavior of the light-induced metastable state has also been investigated at various temperatures. The light soaking and annealing behavior of PMPS is found to be similar to that of hydrogenated amorphous Si.

引用

页码：3612 / 3615

页数：4

共 19 条

[1] ELECTRONIC TRANSPORT IN AMORPHOUS-SILICON BACKBONE POLYMERS [J].