LOW-TEMPERATURE SILICON EPITAXY USING SI2H6

[1] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155

[2] CHANG HR, 1983, ELECTROCHEMICAL SOC, V832, P550

[3] LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1691 - 1697

[4] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765

[5] HAMMOND ML, 1979, SOLID STATE TECHNOL, V22, P61

[6] KERN W, 1970, RCA REV, V31, P187

[7] KULKARNI SB, 1980, ELECTROCHEM SOC EXTE, V802, P1351

[8] MIENO F, 1986, 18TH C SOL STAT DEV, P49

[9] NAKAYAMA S, 1984, JPN J APPL PHYS PT 2, V23, P493

[10] NAMURA I, 1986, 46TH AUT M, P445

[1] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155

[2] CHANG HR, 1983, ELECTROCHEMICAL SOC, V832, P550

[3] LOW-TEMPERATURE SILICON EPITAXY DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION .1. KINETICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1691 - 1697

[4] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2757 - 2765

[5] HAMMOND ML, 1979, SOLID STATE TECHNOL, V22, P61

[6] KERN W, 1970, RCA REV, V31, P187

[7] KULKARNI SB, 1980, ELECTROCHEM SOC EXTE, V802, P1351

[8] MIENO F, 1986, 18TH C SOL STAT DEV, P49

[9] NAKAYAMA S, 1984, JPN J APPL PHYS PT 2, V23, P493

[10] NAMURA I, 1986, 46TH AUT M, P445