MBE OF WIDE BANDGAP II-VI COMPOUNDS

被引：3

作者：

GUNSHOR, RL

KOBAYASHI, M

KOLODZIEJSKI, LA

OTSUKA, N

NURMIKKO, AV

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

[2] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(90)90550-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV. © 1990.

引用

收藏

页码：390 / 398

页数：9

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