GROWTH OF SINGLE-CRYSTAL METASTABLE (GAAS)1-X(SI2)X ALLOYS ON GAAS AND (GAAS)1-X(SI2)X/GAAS STRAINED-LAYER SUPERLATTICES

被引：20

作者：

MEI, DH

KIM, YW

LUBBEN, D

ROBERTSON, IM

GREENE, JE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 25期

关键词：

D O I：

10.1063/1.102300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2649 / 2651

页数：3

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共 29 条

[1] GROWTH OF HIGH-QUALITY EPITAXIAL GAAS FILMS BY SPUTTER DEPOSITION
BARNETT, SA
BAJOR, G
GREENE, JE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 734 - 737
[2] BARNETT SA, 1982, ELECTRON LETT, V81, P891
[3] BURHAM RD, 1985, APPL PHYS LETT, V48, P800
[4] GROWTH OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS
CADIEN, KC
ELTOUKHY, AH
GREENE, JE
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 773 - 775
[5] GROWTH AND THERMAL-STABILITY OF SINGLE-CRYSTAL METASTABLE SEMICONDUCTING (GASB)1-XGEX FILMS
CADIEN, KC
ELTOUKHY, AH
GREENE, JE
[J]. VACUUM, 1981, 31 (06) : 253 - 258
[6] PHASE-TRANSFORMATIONS IN ION-MIXED METASTABLE (GASB)1-X(GE2)X SEMICONDUCTING ALLOYS
CADIEN, KC
MUDDLE, BC
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4177 - 4186
[7] COLBY JW, UNPUB
[8] COMPOSITIONALLY MODULATED SPUTTERED INSB-GASB SUPER-LATTICES - CRYSTAL-GROWTH AND INTERLAYER DIFFUSION
ELTOUKHY, AH
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 505 - 517
[9] STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF INSB THIN-FILMS GROWN BY RF SPUTTERING
GREENE, JE
WICKERSHAM, CE
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) : 3630 - 3639
[10] GROWTH OF SINGLE-CRYSTAL GAAS AND METASTABLE (GASB)1-XGEX ALLOYS BY SPUTTER DEPOSITION - ION-SURFACE INTERACTION EFFECTS
GREENE, JE
BARNETT, SA
CADIEN, KC
RAY, MA
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 389 - 401