GAP-STATES DISTRIBUTION IN AMORPHOUS-SILICON FILMS AS OBTAINED BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

The paper reports results on intrinsic, device-quality amorphous silicon obtained with use of photothermal deflection spectroscopy. The gap-states distribution is obtained by means of a simple and reliable derivative procedure on the absorption-coefficient spectra. A comparison with other models is made. Finally, it is shown that the peak energy of the defects can be different for surface and bulk states, and so a shift of the occupied defect peak is observed if a considerable number of surface states are introduced. This explains the higher values for the dangling-bond correlation energy obtained by means of optical methods and agrees with other experimental evaluations of the distribution of surface states such as those carried out by means of total-yield spectroscopy.