PHOTOTHERMAL AND PHOTOCONDUCTIVE MEASUREMENTS OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON

被引：4

作者：

AMATO, G ^{[1
]}

BENEDETTO, G ^{[1
]}

FIZZOTTI, F ^{[1
]}

MANFREDOTTI, C ^{[1
]}

SPAGNOLO, R ^{[1
]}

机构：

[1] UNIV TURIN,DIPARTIMENTO FIS SPERIMENTALE,I-10125 TURIN,ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 119卷 / 01期

关键词：

D O I：

10.1002/pssa.2211190119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Absorption properties are investigated of low pressure chemical vapor deposition (LPCVD) a‐Si : H by using different techniques as ordinary optical spectroscopy, for the above band‐gap transitions, photoacoustic spectroscopy (PAS) in the sub‐band‐gap range, and constant photocurrent method (CPM) in both regions. As expected, different values of density of states are obtained by means of CPM and PAS. It is shown that, besides different sensitivity to surface states, this difference can reveal inhomogeneities in the material along the growth axis. A simple model is applied to LPCVD a‐Si: H samples and the result suggests that the growth kinetics could change during the film deposition. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：169 / 176

页数：8

共 16 条

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