EXPERIMENTAL-EVIDENCE FOR QUANTUM-SIZE-EFFECT FINE-STRUCTURES IN THE RESISTIVITY OF ULTRATHIN PB AND PB-IN FILMS

被引：102

作者：

JALOCHOWSKI, M ^{[1
]}

BAUER, E ^{[1
]}

KNOPPE, H ^{[1
]}

LILIENKAMP, G ^{[1
]}

机构：

[1] TECH UNIV CLAUSTHAL,INST PHYS,W-3392 CLAUSTHAL ZELLERFE,GERMANY

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13607

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The resistivity of ultrathin single-crystalline Pb and Pb-In layers with thicknesses d smaller than the bulk mean free path 1, is measured during deposition onto Si(111)-(6X6)Au surfaces at about 110 K. The structure of the layers is monitored by reflection high-energy electron diffraction (RHEED). Oscillations of the RHEED specular beam intensity are highly correlated with fine structures of the resistivity. The quantum-size-effect theory is used for a quantitative analysis of the data. The fine structure, volume impurities, small-scale roughness, and large-scale thickness fluctuations are taken into account. The impact of the layer-by-layer growth mode of ultrathin metal films on the thickness dependence of the resistivity is discussed.

引用

页码：13607 / 13613

页数：7

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