THEORY OF INFRARED AND OPTICAL FREQUENCY AMPLIFICATION IN METAL-BARRIER-METAL DIODES

被引：3

作者：

DRURY, DM ^{[1
]}

ISHII, TK ^{[1
]}

机构：

[1] MARQUETTE UNIV,DEPT ELECT ENGN,MILWAUKEE,WI 53233

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 06期

关键词：

D O I：

10.1109/TMTT.1979.1129678

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The near-infrared and optical frequency power gain of a metal-barrier-metal (MBM) point contact diode exhibiting a negative differential resistance region in its current-voltage characteristic is derived as a function of frequency. The diode is treated as a traveling-wave amplifier. The starting point for the analysis is the known electric and magnetic field distribution of the surface waves that propagate in the oxide barrier layer between the diode whisker and substrate, assuming no tunneling current is present. Then the differential tunneling conductance is introduced, and the electric and magnetic field distribution is used to find the propagation constant of the equivalent transmission line formed by the diode structure. It is shown that if the differential tunneling conductance is negative, gain can result. It is shown theoretically that the diode amplifier can provide approximately a 6-dB gain from the C02 laser frequency to the He-Ne laser frequency. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：598 / 603

页数：6

共 16 条

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