PREPARATION OF GA-RICH GAXIN1-XSB ALLOY CRYSTALS

被引:21
作者
BACHMANN, KJ
THIEL, FA
SCHREIBER, H
RUBIN, JJ
机构
关键词
D O I
10.1007/BF02670860
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:445 / 452
页数:8
相关论文
共 16 条
[1]  
BACHMANN KJ, MELT SOLUTION GROWTH
[2]  
CASEY HC, 1978, HETERJUNCTION LASE B
[3]   GROWTH AND CHARACTERIZATION OF GAXIN1-XSB SOLID SOLUTIONS USING TEMPERATURE-GRADIENT ZONE MELTING [J].
HAMAKER, RW ;
WHITE, WB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :478-&
[4]  
IVANOVOMSKII VI, 1959, SOV PHYS-SOL STATE, V1, P834
[5]   PREPARATION AND ELECTRICAL PROPERTIES OF HOMOGENEOUS GAXIN1-XSB ALLOYS [J].
JOULLIE, A ;
BOUGNOT, G ;
ALLEGRE, J .
MATERIALS RESEARCH BULLETIN, 1972, 7 (10) :1101-&
[6]  
JOULLIE A, 1974, MATER RES BULL, V9, P241, DOI 10.1016/0025-5408(74)90073-7
[7]   1.0-1.4-MU-M HIGH-SPEED AVALANCHE PHOTO-DIODES [J].
LAW, HD ;
TOMASETTA, LR ;
NAKANO, K ;
HARRIS, JS .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :416-417
[8]  
LAW HD, 1978, APPL PHYS LETT, V33, P948, DOI 10.1063/1.90229
[9]  
LAW HD, 1979, 37TH IEEE DEV RES C
[10]  
Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39