THE (220) LATTICE SPACING OF SILICON

被引：18

作者：

BASILE, G ^{[1
]}

BERGAMIN, A ^{[1
]}

CAVAGNERO, G ^{[1
]}

MANA, G ^{[1
]}

VITTONE, E ^{[1
]}

ZOSI, G ^{[1
]}

机构：

[1] UNIV TURIN,I-10125 TURIN,ITALY

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期

关键词：

D O I：

10.1109/19.377898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d(220) = (192015.551 +/- 0.005) fm. After correction for the impurity-induced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtained.

引用

收藏

页码：526 / 529

页数：4

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