A NEW LOW-VOLTAGE SI-COMPATIBLE ELECTROLUMINESCENT DEVICE

[1] PERFORMANCE OF DC EL COEVAPORATED ZNS-MN, CU LOW-VOLTAGE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 694 - 697

[2] Allen J. W., 1973, Journal of Luminescence, V7, P228, DOI 10.1016/0022-2313(73)90069-0

[3] POSSIBLE MODEL FOR THIN-FILM AC ELECTROLUMINESCENT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1352 - 1352

[4] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[5] DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1

[6] DOI T, 1980, J APPL PHYS, V51, P4555, DOI 10.1063/1.328285

[7] DONG D, 1978, J ELECTROCHEM SOC, V128, P819

[8] ELECTROLUMINESCENCE IN REVERSE-BIASED ZNS-MN SCHOTTKY DIODES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 691 - 692

[9] Hanak J. J., 1974, JPN J APPL PHYS S, V2, P809, DOI 10.7567/JJAPS.2S1.809

[10] HOWARD WE, 1981, P SID, V22, P47

[1] PERFORMANCE OF DC EL COEVAPORATED ZNS-MN, CU LOW-VOLTAGE DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) : 694 - 697

[2] Allen J. W., 1973, Journal of Luminescence, V7, P228, DOI 10.1016/0022-2313(73)90069-0

[3] POSSIBLE MODEL FOR THIN-FILM AC ELECTROLUMINESCENT DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1352 - 1352

[4] CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4830 - 4841

[5] DIMARIA DJ, 1980, PHYSICS MOS INSULATO, P1

[6] DOI T, 1980, J APPL PHYS, V51, P4555, DOI 10.1063/1.328285

[7] DONG D, 1978, J ELECTROCHEM SOC, V128, P819

[8] ELECTROLUMINESCENCE IN REVERSE-BIASED ZNS-MN SCHOTTKY DIODES [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 691 - 692

[9] Hanak J. J., 1974, JPN J APPL PHYS S, V2, P809, DOI 10.7567/JJAPS.2S1.809

[10] HOWARD WE, 1981, P SID, V22, P47