INTERFACE FORMATION IN IV-IV HETEROSTRUCTURES - TIN ON SILICON

被引：14

作者：

ZINKEALLMANG, M

GOSSMANN, HJ

FELDMAN, LC

FISANICK, GJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574912

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2030 / 2031

页数：2

共 11 条

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[3]

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FELDMAN, LC .

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[6] THE INFLUENCE OF RECONSTRUCTION ON EPITAXIAL-GROWTH - GE ON SI(100)-2X1) AND SI(111)-(7X7) [J].

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FELDMAN, LC ;

GIBSON, WM .

SURFACE SCIENCE, 1985, 155 (2-3) :413-431

[7] MOLECULAR-BEAM EPITAXY AND RECONSTRUCTED SURFACES - INITIAL-STAGES OF INTERFACE FORMATION IN GROUP IV-IV STRUCTURES [J].

GOSSMANN, HJ ;

FELDMAN, LC .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 38 (03) :171-179

[8]

GRABOW MH, 1986, SEMICONDUCTOR BASED, P3

[9] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

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[10]

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