THE STABILIZATION OF METASTABLE PHASES BY EPITAXY

被引：62

作者：

FARROW, RFC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：222 / 228

页数：7

相关论文

共 41 条

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[5] CHERNEVS.EG, 1966, FIZ TVERD TELA+, V8, P169
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[8] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420
[9] THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY
FARROW, RFC
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JONES, GR
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) : 507 - 518
[10] STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL METAL-FILMS GROWN ON ARGON ION BOMBARDED AND ANNEALED (001)INP
FARROW, RFC
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GRANT, AJ
PATTISON, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 292 - 301

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