SYMMETRY-INDUCED ZERO-GAP SEMICONDUCTORS

[1] UNIAXIAL COMPRESSION EFFECTS ON CONDUCTION MECHANISMS IN P-TYPE GALLIUM ANTIMONIDE [J]. JOURNAL DE PHYSIQUE, 1976, 37 (11): : 1347 - 1357

[2] SIMPLE TREATMENT OF ANOMALOUS INTERBAND DIELECTRIC-CONSTANT OF ZERO-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 759 - 766

[3] MAGNETIC-OPTICAL STUDIES OF ACCEPTOR STATES IN HGTE [J]. PHYSICS LETTERS A, 1973, A-46 (02) : 99 - 100

[4] RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (02): : 641 - 650

[5] BASTARD G, 1976, PHYS REV B, V13, P2460

[6] MAGNETIC SUSCEPTIBILITY OF INSB [J]. PHYSICAL REVIEW, 1959, 115 (05): : 1165 - 1172

[7] IONIZED-IMPURITY-LIMITED MOBILITY AND BAND STRUCTURE OF MERCURIC SELENIDE [J]. PHYSICAL REVIEW, 1969, 183 (03): : 754 - &

[8] EFFECT OF P3/2 INTRABAND POLARIZATION ON MOBILITY OF ZERO-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 664 - +

[9] TEMPERATURE DEPENDENCE OF STATIC DIELECTRIC CONSTANT OF A SYMMETRY-INDUCED ZERO-GAP SEMICONDUCTOR [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (24) : 1658 - &

[10] BROERMAN JG, 1972, 11TH P INT C PHYS SE, P917

[1] UNIAXIAL COMPRESSION EFFECTS ON CONDUCTION MECHANISMS IN P-TYPE GALLIUM ANTIMONIDE [J]. JOURNAL DE PHYSIQUE, 1976, 37 (11): : 1347 - 1357

[2] SIMPLE TREATMENT OF ANOMALOUS INTERBAND DIELECTRIC-CONSTANT OF ZERO-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 759 - 766

[3] MAGNETIC-OPTICAL STUDIES OF ACCEPTOR STATES IN HGTE [J]. PHYSICS LETTERS A, 1973, A-46 (02) : 99 - 100

[4] RESONANT ACCEPTOR LEVEL IN ZERO-GAP SEMICONDUCTORS - SINGLE AND MULTIPLE-SCATTERING EFFECTS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 80 (02): : 641 - 650

[5] BASTARD G, 1976, PHYS REV B, V13, P2460

[6] MAGNETIC SUSCEPTIBILITY OF INSB [J]. PHYSICAL REVIEW, 1959, 115 (05): : 1165 - 1172

[7] IONIZED-IMPURITY-LIMITED MOBILITY AND BAND STRUCTURE OF MERCURIC SELENIDE [J]. PHYSICAL REVIEW, 1969, 183 (03): : 754 - &

[8] EFFECT OF P3/2 INTRABAND POLARIZATION ON MOBILITY OF ZERO-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 664 - +

[9] TEMPERATURE DEPENDENCE OF STATIC DIELECTRIC CONSTANT OF A SYMMETRY-INDUCED ZERO-GAP SEMICONDUCTOR [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (24) : 1658 - &

[10] BROERMAN JG, 1972, 11TH P INT C PHYS SE, P917