SYMMETRY-INDUCED ZERO-GAP SEMICONDUCTORS

被引：21

作者：

AVEROUS, M

机构：

[1] Centre D'études D'électronique Des Solides, Associé Au C.N.R.S, Université Des Sciences Et Techniques du Languedoc, Montpellier

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 95卷 / 01期

关键词：

D O I：

10.1002/pssb.2220950102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

[No abstract available]

引用

页码：9 / 28

页数：20

共 61 条

[31] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[32] ENERGY-GAP INDUCED BY MAGNETIC-FIELD IN ZERO-GAP SEMICONDUCTORS [J].

KOWALSKI, J ;

ZAWADZKI, W .

SOLID STATE COMMUNICATIONS, 1973, 13 (09) :1433-1436

[33] TEMPERATURE-DEPENDENT ELECTRICAL PROPERTIES OF HGSE [J].

LEHOCZKY, SL ;

BROERMAN, JG ;

NELSON, DA ;

WHITSETT, CR .

PHYSICAL REVIEW B, 1974, 9 (04) :1598-1620

[34] MAGNETIC SUBBAND STRUCTURE OF ALPHA-SN [J].

LEUNG, W ;

LIU, L .

PHYSICAL REVIEW B, 1973, 8 (08) :3811-3816

[35] DIELECTRIC SINGULARITY OF ALPHA-SN [J].

LIU, L ;

BRUST, D .

PHYSICAL REVIEW, 1968, 173 (03) :777-+

[36] DIELECTRIC CONSTANT AND MOBILITY OF A DOPED ZERO-GAP SEMICONDUCTOR [J].

LIU, L ;

TOSATTI, E .

PHYSICAL REVIEW LETTERS, 1969, 23 (14) :772-&

[37] NEGATIVE-DIFFERENTIAL-RESISTANCE EFFECT IN ZERO-GAP SEMICONDUCTORS [J].

LIU, L ;

LEUNG, W .

PHYSICAL REVIEW LETTERS, 1974, 33 (19) :1145-1147

[38] STATIC DIELECTRIC FUNCTION OF A ZERO-GAP SEMICONDUCTOR [J].

LIU, L ;

BRUST, D .

PHYSICAL REVIEW LETTERS, 1968, 20 (13) :651-+

[39] TRANSPORT PROPERTY OF ZERO-GAP SEMICONDUCTORS UNDER TENSILE STRESS [J].

LIU, L ;

LEUNG, W .

PHYSICAL REVIEW B, 1975, 12 (06) :2336-2345

[40] ACCEPTOR RESONANCES IN HG1-XCDXTE [J].

LIU, L ;

VERIE, C .

PHYSICAL REVIEW LETTERS, 1976, 37 (07) :453-456

← 1 2 3 4 5 6 7 →