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EFFECT OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF SHALLOW SILICIDE CONTACTS ON SI USING PD-W AND PT-W ALLOYS
被引:24
作者
:
EIZENBERG, M
论文数:
0
引用数:
0
h-index:
0
EIZENBERG, M
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
OTTAVIANI, G
TU, KN
论文数:
0
引用数:
0
h-index:
0
TU, KN
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 37卷
/ 01期
关键词
:
D O I
:
10.1063/1.91713
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:87 / 89
页数:3
相关论文
共 7 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 1011
-
+
[2]
FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
KOCH, FB
论文数:
0
引用数:
0
h-index:
0
KOCH, FB
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(10)
: 901
-
&
[3]
METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
KIRCHER, CJ
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 507
-
+
[4]
MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OHDOMARI, I
KUAN, TS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUAN, TS
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(11)
: 7020
-
7029
[5]
CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS
OLOWOLAFE, JO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OLOWOLAFE, JO
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
ANGILELLO, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ANGILELLO, J
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(10)
: 6316
-
6320
[6]
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[7]
Tu K.N., J APPL PHYS
←
1
→
共 7 条
[1]
REVERSE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SILICIDE SCHOTTKY DIODES
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
LEPSELTER, MP
论文数:
0
引用数:
0
h-index:
0
LEPSELTER, MP
[J].
SOLID-STATE ELECTRONICS,
1970,
13
(07)
: 1011
-
+
[2]
FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE
ANDREWS, JM
论文数:
0
引用数:
0
h-index:
0
ANDREWS, JM
KOCH, FB
论文数:
0
引用数:
0
h-index:
0
KOCH, FB
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(10)
: 901
-
&
[3]
METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS
KIRCHER, CJ
论文数:
0
引用数:
0
h-index:
0
KIRCHER, CJ
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 507
-
+
[4]
MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON
OHDOMARI, I
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OHDOMARI, I
KUAN, TS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
KUAN, TS
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(11)
: 7020
-
7029
[5]
CONTACT REACTION BETWEEN SI AND PD-W ALLOY-FILMS
OLOWOLAFE, JO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
OLOWOLAFE, JO
TU, KN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
TU, KN
ANGILELLO, J
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ANGILELLO, J
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(10)
: 6316
-
6320
[6]
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[7]
Tu K.N., J APPL PHYS
←
1
→