CRYSTALLINE QUALITY IMPROVEMENT OF SOS FILMS BY SI IMPLANTATION AND SUBSEQUENT ANNEALING

被引：14

作者：

INOUE, T

YOSHII, T

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1981年 / 182卷 / APR期

关键词：

D O I：

10.1016/0029-554X(81)90796-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：683 / 690

页数：8

共 23 条

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[7] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

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