INGAASP/INP DUAL-WAVELENGTH BH LASER

被引：5

作者：

NAGAI, H

NOGUCHI, Y

SUZUKI, Y

TAKAHEI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 03期

关键词：

D O I：

10.1143/JJAP.21.L173

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L173 / L175

页数：3

相关论文

共 5 条

[1] DUAL WAVELENGTH SURFACE EMITTING INGAASP LEDS
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[2] NAGAI H, 1980, JPN J APPL PHYS, V19, P6218
[3] NEW INGAASP-INP DUAL-WAVELENGTH LED
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UMENO, M
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[4] LPE GROWTH OF 1.5-1.6-MU-M IN1-XGAXAS1-YPY CRYSTALS BY A MODIFIED SOURCE-SEED METHOD
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NAGAI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) : 541 - 550
[5] CW MULTIWAVELENGTH TRANSVERSE-JUNCTION-STRIPE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING PREDOMINANTLY IN SINGLE-LONGITUDINAL MODES
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 441 - 443