EXTENDED FINE-STRUCTURE IN ELASTICALLY SCATTERED ELECTRON-SPECTRA - APPLICATION TO A STUDY OF BI ON AN A-SI SURFACE

被引：1

作者：

BONDARCHUCK, AB

GOYSA, SN

KOVAL, IP

MELNIK, PV

NAKHODKIN, NG

机构：

[1] Radiophysics Department, Kiev Taras Shevchenko University, 252017 Kiev, Volodymerska st.

来源：

SURFACE SCIENCE | 1995年 / 336卷 / 03期

关键词：

ALLOYS; AMORPHOUS SURFACES; AMORPHOUS THIN FILMS; ATOM-SOLID SCATTERING AND DIFFRACTION-ELASTIC; AUGER ELECTRON SPECTROSCOPY; BISMUTH; CARBON; ELECTRON-SOLID INTERACTIONS; EPITAXY; GERMANIUM; GRAPHITE; LOW ENERGY ELECTRON DIFFRACTION (LEED); METAL-SEMICONDUCTOR INTERFACES; METAL-SEMICONDUCTOR NONMAGNETIC HETEROSTRUCTURES; SECONDARY ELECTRON EMISSION; SEMICONDUCTING SURFACES; SILICON; SILICON-GERMANIUM; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)00586-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new surface structure sensitive technique was used to study bismuth adsorption on an a-Si surface. The technique is based on the extended (oscillating) fine structure in the energy dependence of the elastic peak intensity. It was found that the mean interatomic distance at the Bi/Si interface increased with Bi coverage. It is noteworthy that, in the submonolayer region, the mean interatomic distance increases linearly with Bi coverage. We thus propose to treat the Bi/Si interface as a ''quasi-2D-solid solution''.

引用

页码：L767 / L770

页数：4

共 10 条

[1] EXTENDED FINE-STRUCTURE IN ELASTICALLY SCATTERED ELECTRON-SPECTRA - NATURE AND APPLICATION TO STRUCTURE-ANALYSIS [J].