ADSORPTION OF BISMUTH ON SI(001) STUDIED BY AES, REELS AND MASS-SPECTROMETRY

被引：17

作者：

KOVAL, IF

MELNIK, PV

NAKHODKIN, NG

PYATNITSKY, MY

AFANASIEVA, TV

机构：

[1] Kiev Taras Shevchenko University, Radiophysics Department, 252017 Kiev

来源：

SURFACE SCIENCE | 1995年 / 331卷 / pt A期

关键词：

ADATOMS; AUGER ELECTRON SPECTROSCOPY; BISMUTH; ELECTRON ENERGY LOSS SPECTROSCOPY; GROWTH; LOW INDEX SINGLE CRYSTAL SURFACES; SILICON; THERMAL DESORPTION;

D O I：

10.1016/0039-6028(95)00322-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The morphology of bismuth layers on Si(001) has been investigated by electron spectroscopy methods (AES, EELS) and thermodesorption mass-spectrometry. Island formation on the first Bi continuous monolayer occurs during bismuth deposition at room temperature. The thermodesorption of this system at a temperature of similar to 500 degrees C leads to the formation of at least one stable adsorbed Bi phase with a coverage of similar to 0.6-0.7 ML. Bi O-4.5-line REELS of the Bi/Si(001) system has demonstrated the covalent character of the Bi-Si bond.

引用

页码：585 / 589

页数：5

共 10 条

[1] DETERMINATION OF A BI-INDUCED (1X1) STRUCTURE OF THE SI(100) SURFACE [J].