FLAT-BAND POTENTIAL SHIFT OF NORMAL-TYPE GAAS IN CH3CN CONTAINING DIFFERENT REDOX REAGENTS

被引：17

作者：

GABOUZE, N ^{[1
]}

FOTOUHI, B ^{[1
]}

GOROCHOV, O ^{[1
]}

CACHET, H ^{[1
]}

YAO, NA ^{[1
]}

机构：

[1] UNIV PIERRE & MARIE CURIE,PHYS LIQUIDES & ELECTROCHIM LAB,F-75252 PARIS 05,FRANCE

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1987年 / 237卷 / 02期

关键词：

D O I：

10.1016/0022-0728(87)85242-7

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：289 / 293

页数：5

共 10 条

[1] THE CONCEPT OF FERMI LEVEL PINNING AT SEMICONDUCTOR-LIQUID JUNCTIONS - CONSEQUENCES FOR ENERGY-CONVERSION EFFICIENCY AND SELECTION OF USEFUL SOLUTION REDOX COUPLES IN SOLAR DEVICES [J].

BARD, AJ ;

BOCARSLY, AB ;

FAN, FRF ;

WALTON, EG ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3671-3677

[2] SEMICONDUCTOR ELECTRODES .24. BEHAVIOR AND PHOTOELECTROCHEMICAL CELLS BASED ON P-TYPE GA-ARSENIC IN AQUEOUS-SOLUTIONS [J].

FAN, FRF ;

BARD, AJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (11) :3677-3683

[3] QUANTITATIVE COMPARISON OF FERMI LEVEL PINNING AT GAAS/METAL AND GAAS/LIQUID JUNCTIONS [J].

HOROWITZ, G ;

ALLONGUE, P ;

CACHET, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2563-2569

[4] SEMICONDUCTOR ELECTRODES .16. CHARACTERIZATION AND PHOTOELECTROCHEMICAL BEHAVIOR OF NORMAL AND PARA-GAAS ELECTRODES IN ACETONITRILE SOLUTIONS [J].

KOHL, PA ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) :59-67

[5] A QUANTITATIVE INVESTIGATION OF THE OPEN-CIRCUIT PHOTOVOLTAGE OF THE SEMICONDUCTOR LIQUID INTERFACE [J].

LEWIS, NS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2496-2503

[6] ELECTRON-TRANSFER REACTIONS AT N-GAP (100) AND (111) IN ACETONITRILE SOLUTIONS FACILITATED BY CATION ADSORPTION [J].

MCINTYRE, R ;

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1984, 88 (10) :963-969

[7] SEMICONDUCTOR ELECTRODES .49. EVIDENCE FOR FERMI LEVEL PINNING AND SURFACE-STATE DISTRIBUTIONS FROM IMPEDANCE MEASUREMENTS IN ACETONITRILE SOLUTIONS WITH VARIOUS REDOX COUPLES [J].

NAGASUBRAMANIAN, G ;

WHEELER, BL ;

BARD, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) :1680-1688

[8] THE ROLE OF SURFACE CHARGING AND POTENTIAL REDISTRIBUTION ON THE KINETICS OF HOLE INJECTION REACTIONS AT N-GAAS [J].

NOTTEN, PHL .

ELECTROCHIMICA ACTA, 1987, 32 (04) :575-581

[9] ANALYSIS OF TRAPPING AND RECOMBINATION EFFECTS IN PHOTOELECTROCHEMICAL PROCESSES AT SEMICONDUCTOR ELECTRODES - INVESTIGATIONS AT N-GAAS [J].

SCHRODER, K ;

MEMMING, R .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1985, 89 (04) :385-392

[10] A QUANTITATIVE EXPRESSION FOR PARTIAL FERMI LEVEL PINNING AT SEMICONDUCTOR REDOX ELECTROLYTE INTERFACES [J].

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 188 (1-2) :287-291

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