A QUANTITATIVE EXPRESSION FOR PARTIAL FERMI LEVEL PINNING AT SEMICONDUCTOR REDOX ELECTROLYTE INTERFACES

被引：19

作者：

VANMEIRHAEGHE, RL ^{[1
]}

CARDON, F ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1985年 / 188卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0728(85)80070-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：287 / 291

页数：5

共 14 条

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[8] QUANTITATIVE COMPARISON OF FERMI LEVEL PINNING AT GAAS/METAL AND GAAS/LIQUID JUNCTIONS [J].

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[10] ELECTRON TRAPPING IN THE OXIDE LAYER OF MIS-TYPE AL-N-TYPE, AU-N-TYPE, AG-N-TYPE AND SN-N-TYPE GAAS SCHOTTKY BARRIERS [J].

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