AN EXPERIMENTAL-STUDY OF TI-PSI MIS TYPE SCHOTTKY BARRIERS

被引：8

作者：

HANSELAER, PL

LAFLERE, WH

VANMEIRHAEGHE, RL

CARDON, F

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1982年 / 15卷 / 02期

关键词：

D O I：

10.1088/0022-3727/15/2/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L7 / L10

页数：4

共 9 条

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].

ADAMS, AC ;

PRUNIAUX, BR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414

[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[3] AL P-SILICON MOS PHOTOVOLTAIC CELL [J].

CHARLSON, EJ ;

LIEN, JC .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3982-3987

[4] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[6]

Fabre E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P904

[7] MIS SILICON SOLAR-CELLS [J].

FABRE, E .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :607-610

[8]

LAFLERE WH, 1982, SOLID ST ELECTRON

[9] MIS SOLAR-CELLS - REVIEW [J].

PULFREY, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1308-1317

← 1 →