ELECTRON TRAPPING IN THE OXIDE LAYER OF MIS-TYPE AL-N-TYPE, AU-N-TYPE, AG-N-TYPE AND SN-N-TYPE GAAS SCHOTTKY BARRIERS

被引：11

作者：

LAFLERE, WH

VANMEIRHAEGHE, RL

CARDON, F

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 05期

关键词：

D O I：

10.1016/0038-1101(82)90124-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：389 / 393

页数：5

共 9 条

[1] GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS [J].

ADAMS, AC ;

PRUNIAUX, BR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) :408-414

[2] EFFECTS OF ULTRATHIN OXIDES IN CONDUCTING MIS STRUCTURES ON GAAS [J].

CHILDS, RB ;

RUTHS, JM ;

SULLIVAN, TE ;

FONASH, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1397-1401

[3]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4]

GROVE AS, 1967, PHYS TECHNOL S, P279

[5] INVESTIGATION OF THE C-V BEHAVIOR OF GAAS-METAL AND GAAS-ELECTROLYTE CONTACTS UNDER FORWARD BIAS [J].

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (11) :2135-2142

[6]

LAFLERE WH, 1976, THESIS STATE U GENT

[7] HIGH-FIELD ELECTRON TRAPPING IN SIO2 [J].

SOLOMON, P .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3843-3849

[8] EFFECTS OF THIN OXIDE LAYERS ON THE CHARACTERISTICS OF GAAS MIS SOLAR-CELLS [J].

VANMEIRHAEGHE, RL ;

CARDON, F ;

GOMES, WP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (02) :477-484

[9]

Young D.R., 1980, I PHYS C SERIES, V50, P28

← 1 →